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Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation
Keiichi UEDA Kiyoshi SHIBATA Kazunobu MAMENO
IEICE TRANSACTIONS on Electronics
Publication Date: 1996/03/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Issue on Scientific ULSI Manufacturing Technology)
Category: High-Performance Processing
Photoresist, ion implantation, dry etching, resist selectivity,
Full Text: PDF(287.3KB)>>
A novel method has been developed to improve the dry etching selectivity of aluminum alloy with respect to photoresist by implanting ions into the patterned photoresist. The selectivity becomes 7.5, which is 5 times higher than that of the unimplanted case. Accordingly, this technology is very promising for fabricating multi-level interconnections in sub-half micron LSIs.