Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation

Keiichi UEDA  Kiyoshi SHIBATA  Kazunobu MAMENO  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.3   pp.382-384
Publication Date: 1996/03/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Issue on Scientific ULSI Manufacturing Technology)
Category: High-Performance Processing
Photoresist,  ion implantation,  dry etching,  resist selectivity,  

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A novel method has been developed to improve the dry etching selectivity of aluminum alloy with respect to photoresist by implanting ions into the patterned photoresist. The selectivity becomes 7.5, which is 5 times higher than that of the unimplanted case. Accordingly, this technology is very promising for fabricating multi-level interconnections in sub-half micron LSIs.