Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors

Hiromi SHIMAMOTO  Masamichi TANABE  Takahiro ONAI  Katsuyoshi WASHIO  Tohru NAKAMURA  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.2   pp.211-218
Publication Date: 1996/02/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Reliability Analysis
self-aligned bipolar transistor,  hot-carrier,  emitter-base reverse voltage stress,  

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The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced self-aligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.