Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure

Masafumi KATSUMATA  Jun-ichi MITSUHASHI  Kiyoteru KOBAYASHI  Yoji MASHIKO  Hiroshi KOYAMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.2   pp.206-210
Publication Date: 1996/02/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Reliability Analysis
Keyword: 
test structure,  very low-level current,  atto amperes,  measurement technique,  

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Summary: 
A test structure has been developed with very low-level current measurement technique and is used to evaluate a very small change of leakage current caused by the trapping and detrapping of electrons or holes. The present technique realizes detection of very low levels of leakage current (minimum detectable current is 510-17 A), which is necessary in the course of evaluating gate oxides. This technique is very useful for the evaluation of retention characteristics and stress induced degradation of gate oxides.