Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors

Masamichi TANABE  Hiromi SHIMAMOTO  Takahiro ONAI  Katsuyoshi WASHIO  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.2   pp.165-171
Publication Date: 1996/02/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
self-aligned bipolar transistor,  base resistance,  parasitic base resistance,  spreading resistance,  

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A simplified distribution base resistance model (SDM) is proposed to identify each component of the base resistance and determine the dominant. This model divides the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter. In the SDM, the distance of the link base is reduced to half; with metal silicide as the extrinsic base electrode, the base resistance will be reduced to 75%.