Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential

Kensuke OGAWA  Kenji HIRUMA  Toshio KATSUYAMA  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.11   pp.1573-1578
Publication Date: 1996/11/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
GaAs,  whisker,  radiative recombination,  quantum confinement,  

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Photoluminescence characterization with a surface treatment suggests that a reduction in the radiative recombination rate of GaAs nanowhiskers is caused by charge separation in depletion potential. Good agreement is obtained between photoluminescence characteristics and calculations based on self-consistent wavefunctions confined in the depletion potential. The radiative life time of 200-nm GaAs nanowhiskers at 77 K is estimated as short as 0.5 ns if the depletion potential is completely eliminated. Weak size dependence of photoluminescence spectra at 6 K is explained as a sign of band-gap reduction induced by the depletion potential.