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Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy
Takeyoshi SUGAYA Tadashi NAKAGAWA Yoshinobu SUGIYAMA
IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
quantum wire, MBE, In GaAs, InAlAs, compositional control,
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The fabrication of InAlAs wire structures and InGaAs quantum wire structures on non-planer InP substrates with truncated ridges by molecular beam epitaxy is demonstrated. Indium-rich InAlAs epitaxial layers grown on top of ridges exhibit self-formation of electron-confining InAlAs wire structures. The InAlAs layers on top of the ridges lattice-matched to the substrate are obtained by the control of In flux during the growth. The InGaAs quantum wire structures have been fabricated on thus composition-controlled InAlAs barrier layers. The optical properties of the InGaAs quantum wires with composition-controlled InAlAs barrier layer are found to be better than that of the wires without compositional control.