Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation

Yutaka OHNO  Shigeru KISHIMOTO  Takashi MIZUTANI  Koichi MAEZAWA  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.11   pp.1530-1536
Publication Date: 1996/11/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
resonant tunneling transistor,  MOBILE,  operation speed,  negative differential resistance,  capacitance,  

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We analyzed the operation speed of the resonant tunneling logic gate, MOBILE, using a simple equivalent circuit model and varying parameters of I-V characteristics and capacitance of RTTs(resonant tunneling transistors). The switching time for large peak-to-valley(P/V)current ratios is smaller at small Vbmax(maximum bias voltage), but larger at large Vbmax than that for small P/V ratios in the case of present I-V characteristics with flat valley current. It is also demonstrated that the MOBILE operation fails if the bias voltage rises too fast, when the capacitance of the load and the driver is different due to the displacement current through the capacitance. These behaviors can be explained by considering the potential diagrams of the circuit.