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Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes Including Coherent and Incoherent Tunneling Processes
Riichiro TAKEMURA Michihiko SUHARA Yasuyuki MIYAMOTO Kazuhito FURUYA Yuji NAKAMURA
IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
triple-barrier resonant tunneling diodes, phase coherent length, coherent tunneling,
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Current-voltage characteristics of triple-barrier resonant tunneling diodes are theoretically analyzed taking phase breaking into account. The peak current in predicted using conventional theories is much smaller, typically by a factor of 1/3000 for a coherent length of 100 nm, than that measured because the incoherent tunneling process is neglected. We take both the coherent and the incoherent tunneling processes into account in the analysis and show that the product of the peak current and the voltage width at half maximum of the peak current is almost constant even when the phase coherent length varies between 50 and 1000 nm. The peak current density increases by two orders of magnitude in the model developed here.