Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs

Kevin Jing CHEN  Koichi MAEZAWA  Takao WAHO  Masafumi YAMAMOTO  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.11   pp.1515-1524
Publication Date: 1996/11/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
RTD,  HEMT,  negative differential resistance,  negative transconductance,  quantum functional devices,  

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This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in Parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.