x line are examined in detail. The single electron transistors with back gate, or side gate, and also those with multi-islands are fabricated using STM nano-oxidation process. The single electron transistor showed the clear Coulomb gap of -160 mV, and the Coulomb oscillation with 400 mV period even at room temperature." />


Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties

Kazuhiko MATSUMOTO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.11   pp.1509-1514
Publication Date: 1996/11/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
single electron transistor,  STM,  nano-fabrication,  

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Summary: 
New fabrication process for the nano-meter order structure was developed using the STM. The process named "STM nano-oxidation process" could oxidize the titanium metal to form the few tens of nano-meter oxidized titanium line which works as an energy barrier for the electron. The electrical properties of the TiOx line are examined in detail. The single electron transistors with back gate, or side gate, and also those with multi-islands are fabricated using STM nano-oxidation process. The single electron transistor showed the clear Coulomb gap of -160 mV, and the Coulomb oscillation with 400 mV period even at room temperature.