Si Single-Electron Transistors on SIMOX Substrates

Yasuo TAKAHASHI  Akira FUJIWARA  Masao NAGASE  Hideo NAMATSU  Kenji KURIHARA  Kazumi IWADATE  Katsumi MURASE  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E79-C    No.11    pp.1503-1508
Publication Date: 1996/11/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
single-electron,  Coulomb blockade,  tunneling,  pattern fluctuation,  

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Summary: 
A Si single electron transistor (SET) was fabricated by converting a one-dimensional Si wire on a SIMOX substrate into a small Si island with a tunneling barrier at each end by means of pattern-dependent oxidation. Since the size of the Si island was as small as around 10 nm owing to this novel technique, the total capacitance of the SET was reduced to a value on the order of 1 aF, which guarantees the conductance oscillation of the SET even at room temperature. Furthermore, a linear relation between the designed wire length and the gate capacitance of SETs was obtained, which clearly indicates that the single island was actually formed in the middle of the one dimensional Si wire. These results were achieved owing to the highly reproducible fabrication process based on pattern dependent oxidation of SIMOX-Si layers. In addition, the fluctuation of the electrical characteristics of the SETs Was studied in relation to the wire size fluctuations. It was found that the fluctuatian is caused predominantly by the roughness of the sidewall surface of the resist pattern.