Self-Organization Phenomenon in a Strained InGaAs System and Its Application for Quantum Disk Lasers

Jiro TEMMYO  Eiichi KURAMOCHI  Mitsuru SUGO  Teruhiko NISHIYA  Richard NOTZEL  Toshiaki TAMAMURA  

IEICE TRANSACTIONS on Electronics   Vol.E79-C    No.11    pp.1495-1502
Publication Date: 1996/11/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
self-organization,  strained InGaAs quantum disk,  MOVPE,  quantum disk laser,  

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We have recently discovered a novel phenomenon for the fabrication of nanostructures. A self-organization phenomenon of a strained InGaAs/AlGaAs system on a GaAs (311)B substrate during metal-organic vapor phase epitaxial growth is described, and nano-scale confinement lasers with self-organized InGaAs quantum disks are mentioned. Low-threshold operation of strained InGaAs quantum disk lasers is achieved under a continuous-wave condition at room temperature. The threshold current is around 20 mA, which is consider-ably lower than that of a reference double-quantum-well laser on a GaAs (100) substrate grown side-by-side. However, the light output versus the driving current exhibits a pronounced tendency towards a saturation compared to that of the (100) quantum well laser. We also discuss new methods using self-organization for nanofabrication to produce high-quality low-dimensional optical devices, considering requirements and the current status for next-generation optical devices.