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The Long-Term Charge Storage Mechanism of Silicon Dioxide Electrets for Microsystems
Mitsuo ICHIYA Takuro NAKAMURA Shuji NAKATA Jacques LEWINER
IEICE TRANSACTIONS on Electronics Vol.E79-C No.10 pp.1462-1466
Publication Date: 1996/10/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
electret, silicon dioxide, plasma chemical vapor deposition, charge stability, thermally stimulated current, electron spin resonance,
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In order to improve the sensitivity of micromachined sensors applied with electrostatic fields and increase their actuated force of electrostatic micromachined actuators, "electrets," which are dielectrics carrying non equilibrium permanent space charges of polarization distribution, are very important. In this paper, positively corona charged silicon dioxide electrets, which are deposited by Plasma Chemical Vapor Deposition (PCVD) and thermally oxidized, are investigated. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials. The electrets with superior long-term charge stability contain 10,000 times as much E' center (Si3 as the ones with inferior long-term charge stability. Finally, some investigations on the long-term charge storage mechanism of the positively charged silicon dioxide electret will be described.