GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD

Seiji UCHIYAMA  Susumu KASHIWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.9   pp.1311-1314
Publication Date: 1995/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Opto-Electronics
Keyword: 
surface-emitting laser,  buried heterostructure,  metalorganic chemical vapor deposition,  square mesa,  

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Summary: 
Mesa structures have been investigated to optimize a buried-heterostructure (BH) for a GaInAsP/InP surface-emitting (SE) laser regrown by metalorganic chemical vapor deposition (MOCVD), and it has been found that a square mesa top pattern of which the sides are at an angle of 45 to the 011 orientation is suitable. A 1.3-µm GaInAsP/InP square buried heterostructure (SBH) SE laser with this mesa structure has been demonstrated and low-threshold CW oscillation (threshold current Ith=0.45 mA) at 77 K and low-threshold room-temperature pulsed oscillation (Ith=12 mA) have been obtained.