A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching

Naohito YOSHIDA  Toshiaki KITANO  Yoshitsugu YAMAMOTO  Takayuki KATOH  Hiroyuki MINAMI  Takuo KASHIWA  Takuji SONODA  Hirozo TAKANO  Osamu ISHIHARA  

IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.9   pp.1279-1285
Publication Date: 1995/09/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
HEMT,  AlInAs/InGaAs,  InP,  low-noise,  selectiverecess,  

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A 0.15 µm T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with an excellent RF performance has been developed using selective wet gate recess etching. The gate recess is formed by a pH-adjusted citric acid/NH4OH/H2O2 mixture with an etching selectivity of more than 30 for InGaAs over AlInAs. The standard deviation of saturation drain current (Idss) is as small as 3.2 mA for an average Idss of 47 mA on a 3 inch diameter InP wafer. The etching time for recess formation is optimized and an ft of 130 GHz and an MSG of 10 dB at 60 GHz are obtained. The extremely low minimum noise figure (Fmin) of 0.9 dB with an associated gain (Ga) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device. This noise performance is comparable to the lowest value of Fmin ever reported for an AlInAs/InGaAs HEMT with a passivation film.