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A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression
Tsuyoshi TANAKA Hideo NAGAI Daisuke UEDA
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
GaAs, one-chip, oscillator, BST, laser diode,
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A GaAs defferential oscillator IC with on-chip LC resonator has been developed for suppressing the relative intensity noise (RIN) of a laser diode. The relationship between the Q-factor and minimum supply voltage for oscillation is fully described. In view of reducing the present LC resonator, we made use of BST (Barium Strontium Titanate) capacitor to make the resonator without increasing the chip area. The oscillation frequency is stable since it's determined by the geometry of the resonator. The experimentally fabricated oscillator IC achieved the output power of 12 dBm at the frequency of 600 MHz with voltage/current conditions of 2 V/20 mA. The present IC keeps quite stable RIN value less than -138 dB/Hz under the light-feedback condition up to 10%.