A High Efficiency GaAs Power Amplifier of 4.6 V Operation for 1.5 GHz Digital Cellular Phone Systems

Akihisa SUGIMURA
Kazuki TATEOKA
Hidetoshi FURUKAWA
Kunihiko KANAZAWA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C    No.9    pp.1237-1240
Publication Date: 1995/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
GaAs FET,  power amplifier module,  high efficiency,  adjacent channel leakage power,  π/4-shift OPSK signal,  

Full Text: PDF(380.6KB)>>
Buy this Article



Summary: 
A high efficiency and low voltage operation GaAs power amplifier module has been developed for the application to 1.5 GHz Japanese digital cellular phones. This paper summarizes the design method to increase efficiency and to reduce adjacent channel leakage power. Operated at a low drain bias voltage of 4.6 V, the power amplifier module delivers an output power of 1.5 W with 46% power-added efficiency and -52 dBs adjacent channel leakage power.