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60-GHz HEMT-Based MMIC One-Chip Receiver
Tamio SAITO Norio HIDAKA Yoji OHASHI Kazuo SHIRAKAWA Yoshihiro KAWASAKI Toshihiro SHIMURA Hideyuki OIKAWA Yoshio AOKI
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
HEMT, MMIC, millimeter-wave, receiver,
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This paper presents the fabrication and evaluation of a 60 GHz fully integrated MMIC one-chip receiver based on pseudomorphic InGaP/InGaAs/GaAs HEMT technology. The receiver consists of two 2-stage low-noise amplifiers (LNAs), a single-balanced active-gate mixer, a local oscillator (LO), and a buffer amplifier for the LO. The receiver has a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain is 20 dB at 62.2 GHz. The noise figure of receiver is less than 6 dB in the IF range between 100 MHz and 1 GHz for a 61.536 GHz LO frequency, and the minimum noise figure is 4.9 dB at 1 GHz IF.