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Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
Kazuhiko NAKAHARA Yasushi ITOH Yoshie HORIIE Takeshi SAKURA Naohito YOSHIDA Takayuki KATOH Tadashi TAKAGI Yasuo MITSUI Yasuyuki ITO
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
amplifier, low noise, MMIC, millimeter-wave, HEMT,
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Millimeter-wave monolithic low noise amplifier modules using 0.15 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMTs have been developed at V- and W-bands for the Advanced Microwave Scanning Radiometer. To achieve low noise and high gain of V-band single-stage and W-band two-stage monolithic amplifiers, a reactive matching method is employed in the design of input noise matching and output gain matching circuits based on the results of on-carrier S-parameter measurements up to 50 GHz and noise parameter measurements at 60 and 90 GHz. A V-band four-stage monolithic amplifier module has been mounted on a hermetically-sealed package with microstrip interface and has achieved a noise figure of 3 dB with a gain of 42.2 dB at 51 GHz. A W-band six-stage amplifier module has been mounted on a hermetically-sealed package with waveguide interface and has achieved a noise figure of 4.3 dB with a gain of 28.1 dB at 91 GHz. These results represent the best noise figure performance ever achieved by multi-stage monolithic low-noise amplifier modules.