A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications

Masami TOKUMITSU  Kazumi NISHIMURA  Makoto HIRANO  Kimiyoshi YAMASAKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.9   pp.1189-1194
Publication Date: 1995/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
WSiN,  refractory metal,  frequency divider,  GaAs MESFET,  BP-LDD,  

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Summary: 
A 0.1-µm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.