Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors

Kenji KURISHIMA  Hiroki NAKAJIMA  Shoji YAMAHATA  Takashi KOBAYASHI  Yutaka MATSUOKA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.9   pp.1171-1181
Publication Date: 1995/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HBT,  MOVPE,  Zn diffusion,  abrupt emitter,  graded base,  hot electron injection,  nonequilibrium transport,  current blocking effect,  lateral down-scaling,  emitter size effect,  

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Summary: 
This paper discusses crystal-growth and device-design issues associated with the development of high-performance InP/InGaAs heretostructure bipolar transistors (HBTs). It is shown that a highly Si-doped n+-subcollector in the HBT structure causes anomalous Zn redistribution during metalorganic vapor phase epitaxial (MOVPE) growth. A thermodynamical model of and a useful solution to this big problem are presented. A novel hybrid structure consisting of an abrupt emitter-base heterojunction and a compositionally-graded base is shown to enhance nonequilibrium base transport and thereby increase current gain and cutoff frequency fT. A double-heterostructure bipolar transistor (DHBT) with a step-graded InGaAsP collector can improve collector breakdown behavior without any speed penalty. We also elucidate the effect of emitter size shrinkage on high-frequency performance. Maximum oscillation frequency fmax in excess of 250 GHz is reported.