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Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
HBT, MOVPE, Zn diffusion, abrupt emitter, graded base, hot electron injection, nonequilibrium transport, current blocking effect, lateral down-scaling, emitter size effect,
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This paper discusses crystal-growth and device-design issues associated with the development of high-performance InP/InGaAs heretostructure bipolar transistors (HBTs). It is shown that a highly Si-doped n+-subcollector in the HBT structure causes anomalous Zn redistribution during metalorganic vapor phase epitaxial (MOVPE) growth. A thermodynamical model of and a useful solution to this big problem are presented. A novel hybrid structure consisting of an abrupt emitter-base heterojunction and a compositionally-graded base is shown to enhance nonequilibrium base transport and thereby increase current gain and cutoff frequency fT. A double-heterostructure bipolar transistor (DHBT) with a step-graded InGaAsP collector can improve collector breakdown behavior without any speed penalty. We also elucidate the effect of emitter size shrinkage on high-frequency performance. Maximum oscillation frequency fmax in excess of 250 GHz is reported.