Highly Efficient 1.5-GHz Band Si Power MOS Amplifier Module

Isao YOSHIDA  Mineo KATSUEDA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.8   pp.979-983
Publication Date: 1995/08/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
Si power MOS amplifier module,  digital cellular transmitter,  integrated impedance matching,  

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Summary: 
A 1.5 GHz band Si power MOS amplifier module with 50% total efficiency, 1 W output power and 30 dB power gain has been developed for front-end transmitter of digital cellular telephones. A combination of a highly efficient power MOSFET for the output stage and an integrated two stage MOS amplifier for the driver with an impedance matching circuit minimizing the length of striplines made it possible to achieve high total efficiency, high power gain, and smaller size of the amplifier module.