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A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology
Hiroyuki SAKAI Yorito OTA Kaoru INOUE Takayuki YOSHIDA Kazuaki TAKAHASHI Suguru FUJITA Morikazu SAGAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
millimeter-wave, flip-chip, IC (Integrated Circuit), microstrip line, bump,
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A new mm-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated by using MBB (micro bump boding) technology. Millimeter-wave characteristics of the MBB region has been estimated by electro-magnetic field analysis. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band. Several MFIC amplifiers with their designed performances have been successfully fabricated.