A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology

Hiroyuki SAKAI  Yorito OTA  Kaoru INOUE  Takayuki YOSHIDA  Kazuaki TAKAHASHI  Suguru FUJITA  Morikazu SAGAWA  

IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.8   pp.971-978
Publication Date: 1995/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
millimeter-wave,  flip-chip,  IC (Integrated Circuit),  microstrip line,  bump,  

Full Text: PDF>>
Buy this Article

A new mm-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated by using MBB (micro bump boding) technology. Millimeter-wave characteristics of the MBB region has been estimated by electro-magnetic field analysis. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band. Several MFIC amplifiers with their designed performances have been successfully fabricated.