A GaAs Single Voltage Controlled RF Switch IC

Kazuo MIYATSUJI  Daisuke UEDA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.8   pp.931-935
Publication Date: 1995/08/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
GaAs,  MESFET,  switch,  BST,  

Full Text: PDF(351.8KB)>>
Buy this Article




Summary: 
A new GaAs monolithic switch IC that can be operated with a single positive control voltage is developed. The implemented IC is provided two different biasing configurations with the switching FETs. Each FET can be biased independently by large capacitors fabricated employing the BST (Barium Strontium Titanate) technology. The fabricated SPDT (Single-Pole-Double-Throw) swicth IC shows insertion loss less than 1.0 dB and isolation over 25 dB in the frequency range of 0.1 GHz to 1.9 GHz with a single control voltage of 3 V.