A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs

Kazumi NISHIMURA  Kiyomitsu ONODERA  Kou INOUE  Masami TOKUMITSU  Fumiaki HYUGA  Kimiyoshi YAMASAKI  

IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.8   pp.907-910
Publication Date: 1995/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
WSiN,  InGaP,  asymmetric LDD structure,  GaAs,  MMIC,  

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We have developed a planar devic technology consisting of 0.15-µm Au/WSiN-gate GaAs-heterostructure MESFETs (HMESFETs) fabricated by self-aligned ion-implantation. The gate-drain breakdown voltage has been improved to 10 V by using an asymmetric LDD structure, and the maximum oscillation frequency is 190 GHz. Because asymmetric and symmetric FETs can be fabricated simultaneously, this technology is suitable for use in making multi-functional millimeter-wave MMICs.