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Low-Power Technology for GaAs Front-End ICs
Tadayoshi NAKATSUKA Junji ITOH Kazuaki TAKAHASHI Hiroyuki SAKAI Makoto TAKEMOTO Shinji YAMAMOTO Kazuhisa FUJIMOTO Morikazu SAGAWA Osamu ISHIKAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Analog Circuits
mobile communication, front-end, down-converter, up-converter, GaAs IC, hybrid IC, low-power consumption,
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Low-power technology for front-end GaAs ICs and hybrid IC (HIC) for a mobile communication equipment will be presented. For low-power operation of GaAs front-end ICs, new techniques of the intermediate tuned circuits, the single-ended mixer, dualgate MESFETs, and the asymmetric self-aligned LDD process were investigated. The designed down-converter IC showed conversion gain of 21 dB, noise figure of 3.5 dB, 3rd-order intercept point in output level (IP3out) of 4.0 dBm, image-rejection ratio of 20 dB at 880 MHz, operating at 3.0 V of supply voltage and 5.0 mA of dissipation current. The down-converter IC was also designed for 1.9 GHz to obtain conversion gain of 20 dB, noise figure of 4.0 dB, IP3out of 4.0 dBm, image-rejection ratio of 20 dB at 3.0 V, 5.0 mA. The up-converter IC was designed for 1.9 GHz using the same topology of circuit and showed conversion gain of 15 dB, IP3out of 7.5 dBm, and 1 dB compression level of -8 dBm with -20 dBm of LO input power, operating at 3.0 V, 8.0 mA. Another approach to the low-power operation was carried out by HIC using the GaAs down-converter IC chip. The HIC was designed for 880 MHz to show conversion gain of 27 dB, noise figure of 3.3 dB, IP3out of 3.0 dBm, image-rejection ratio of 12 dB, at 2.7 V, 4.5 mA. The HIC measures only 8.0 mm6.0 mm1.2 mm.