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A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
Masami NAGAOKA Tomotoshi INOUE Katsue KAWAKYU Shuichi OBAYASHI Hiroyuki KAYANO Eiji TAKAGI Yoshikazu TANABE Misao YOSHIMURA Kenji ISHIDA Yoshiaki KITAURA Naotaka UCHITOMI
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Analog Circuits
monolithic power amplifier, gallium arsenide, PHS, single low voltage supply, high linearity,
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A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WNx/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.