A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications

Masami NAGAOKA  Tomotoshi INOUE  Katsue KAWAKYU  Shuichi OBAYASHI  Hiroyuki KAYANO  Eiji TAKAGI  Yoshikazu TANABE  Misao YOSHIMURA  Kenji ISHIDA  Yoshiaki KITAURA  Naotaka UCHITOMI  

IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.4   pp.424-429
Publication Date: 1995/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Analog Circuits
monolithic power amplifier,  gallium arsenide,  PHS,  single low voltage supply,  high linearity,  

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A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WNx/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.