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Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
Yuu WATANABE Yasuhiro NAKASHA Kenji IMANISHI Masahiko TAKIKAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
RTD, HEMT, SRAM, negative differential resistance, digital circuits,
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We report the first monolithic integration of InGaAs/InAlAs resonant tunneling diode (RTD) and high electron mobility transistor (HEMT) epitaxially grown on an InP substrate. The transconductance for a 1-µm gate HEMT was 430 mS/mm and the peak-to-valley current ratio of the RTD was 5.1. Using the integrated structure, we demonstrate basic digital circuits to show low power characteristics of an RTD-load inverter and a static RAM cell circuit, consisting of a single transistor with two RTDs on the transistor. The memory cell circuit exhibits bistability, based on the RTD's negative differential resistance (NDR), at supply voltages from 0.6 to 1.1 V. The static power consumption was 7.3 µW/gate for the inverter and 3.0 µW for memory cell.