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High-Speed and Low-Power n+-p+ Double-Gate SOI CMOS
Kunihiro SUZUKI Tetsu TANAKA Yoshiharu TOSAKA Hiroshi HORIE Toshihiro SUGII
Publication
IEICE TRANSACTIONS on Electronics
Vol.E78-C
No.4
pp.360-367 Publication Date: 1995/04/25 Online ISSN:
DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits) Category: Device Technology Keyword: MOSFET, SOI, double-gate, high-speed, low-power, threshold voltage,
Full Text: PDF>>
Summary:
We propose and fabricate n+-p+ double-gate SOI MOSFETs for which threshold voltage is controlled by interaction between the two gates. Devices have excellent short channel immunity, dispite a low channel doping concentration of 1015 cm-3, and enable us to design a threshold voltage below 0.3 V while maintaining an almost ideal subthreshold swing. We demonstrated 27 ps CMOS inverter delay with a gate length of 0.19 µm, which is, to our knowledge, the lowest delay for this gate length despite rather a thick 9 nm gate oxide. This high performance is a result of the low threshold voltage and negligible drain capacitance. We also showed theoretically that we can design a 0.1 µm gate length device with an ideal subthreshold swing, and that we can expect less than 10 ps inverter delay at a supply voltage of 1 V.
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