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An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AIGaAs/InGaAs Pseudomorphic HEMT
Takuo KASHIWA Takayuki KATOH Naohito YOSHIDA Hiroyuki MINAMI Toshiaki KITANO Makio KOMARU Noriyuki TANINO
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electromagnetic Theory
millimeter-wave, low noise figure, MMIC, AlGaAs/InGaAs Pseudomorphic HEMT, modeling,
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An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB with an associated gain of 8.1 dB is achieved at 50 GHz. The noise figure is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of-the-art noise figure for low noise amplifiers around 50 GHz. The success of this LNA development came from the excellent HEMT and MMIC technologies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GHz to 60 GHz is obtained.