Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors


IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.2   pp.186-192
Publication Date: 1995/02/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
InP,  InGaAs,  HBT,  high-speed,  low-power,  

Full Text: PDF(567KB)>>
Buy this Article

Self-aligned InP/InGaAs heterojunction bipolar transistors (HBTs) were fabricated with emitter electrodes of 12, 22, 25, and 220 µm2 on the same wafer to investigate the influence of lateral scaling on device performance. DC characterization of these devices showed that InP/InGaAs HBTs are less subject to the emitter-size effect than GaAs-based HBTs. Common-emitter current gain β of the smallest 12-µm2 transistor was approximately 60 which is high enough for practical use. High-frequency characteristics of the transistors were almost the same in spite of the large difference in device size. Unity current-gain cutoff frequency fT of the smallest 12-µm2 transistor was as high as 163 GHz at a collector current of 2.3 mA, which ranks with the fT176 GHz achieved by the largest 220-µm2 transistor at a collector current of 45 mA. The smallest device also showed an excellent high-speed performance of fT100 GHz at submilliampere collector currents of Ic0.6 mA. The results indicate that small-lateral-dimension InP/InGaAs HBTs are applicable to high-speed ICs with low power dissipation.