Hardware Implementation of New Analog Memory for Neural Networks

Koji NAKAJIMA  Shigeo SATO  Tomoyasu KITAURA  Junichi MUROTA  Yasuji SAWADA  

IEICE TRANSACTIONS on Electronics   Vol.E78-C    No.1    pp.101-105
Publication Date: 1995/01/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
analog memory,  floating gate,  neurochip,  SDAM,  

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We have fabricated a new analog memory with a floating gate as a key component to store synaptic weights for integrated artificial neural networks. The new analog memory comprises a tunnel junction (poly-Si/poly-si oxide/poly-Si sandwich structure), a thin-film transistor, two capacitors, and a floating gate MOSFET. The diffusion of the charges injected through the tunnel junction is controlled by switching operation of the thin-film transistor, and we refer to the new analog memory as switched diffusion analog memory (SDAM). The obtained characteristics of SDAM are a fast switching speed and an improved linearity between the potential of the floating gate and the number of pulse inputs. SDAM can be used in a neural network in which write/erase and read operations are performed simultaneously.