IEICE Trans - Hardware Implementation of New Analog Memory for Neural Networks

Hardware Implementation of New Analog Memory for Neural Networks

Koji NAKAJIMA  Shigeo SATO  Tomoyasu KITAURA  Junichi MUROTA  Yasuji SAWADA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C    No.1    pp.101-105
Publication Date: 1995/01/25
Online ISSN:
DOI:
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword:
analog memory,  floating gate,  neurochip,  SDAM,

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Summary:
We have fabricated a new analog memory with a floating gate as a key component to store synaptic weights for integrated artificial neural networks. The new analog memory comprises a tunnel junction (poly-Si/poly-si oxide/poly-Si sandwich structure), a thin-film transistor, two capacitors, and a floating gate MOSFET. The diffusion of the charges injected through the tunnel junction is controlled by switching operation of the thin-film transistor, and we refer to the new analog memory as switched diffusion analog memory (SDAM). The obtained characteristics of SDAM are a fast switching speed and an improved linearity between the potential of the floating gate and the number of pulse inputs. SDAM can be used in a neural network in which write/erase and read operations are performed simultaneously.