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Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation--Part : Compact Device Model--
Yevgeny V. MAMONTOV Magnus WILLANDER
IEICE TRANSACTIONS on Electronics
Publication Date: 1995/12/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
silicon bipolar transistor, compact model, thermal noise, carrier-velocity fluctuations, Ornstein-Uhlenbeck stationary stochastic process, "microplasma" noise, Itô's non-linear stochastic-differential-equation system,
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This work deals with thermal-noise modeling for silicon vertical bipolar junction transistors (BJTs) and relevant integrated circuits (ICs) operating at low currents. The two-junction BJT compact model is consistently derived from the thermal-noise generalization of the Shockley semiconductor equations developed in work which treats thermal noise as the noise associated with carrier velocity fluctuations. This model describes BJT with the Itô non-linear stochastic-differential-equation (SDE) system and is suitable for large-signal large-fluctuation analysis. It is shown that thermal noise in silicon p-n-junction diode contributes to "microplasma" noise. The above model opens way for a consistent-modeling-based design/optimization of bipolar device noise performance with the help of theory of Itô's SDEs.