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Design of a 1 W, Single Filament Laser Diode
Iulian B. PETRESCU-PRAHOVA
Theo G. van de ROER
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
laser diode, high power, AlGaAs, InGaAs,
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A design of a high power laser structure is presented which is based on an increase of the cavity length as well as a maximization of the stripe width. This requires a low value for the modal attenuation coefficent and a low optical confinement factor. A model is presented from which the modal gain, the confinement factor, the active region thickness, the stripe width, the length and the reflection coefficients can be calculated. A variant for all design parameters needed to reach 1 W emission in the fundamental lateral mode is given. These values are used to design the epitaxial structure.