The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film

Hitoshi SUMIDA  Atsuo HIRABAYASHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.9   pp.1464-1471
Publication Date: 1994/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
SOI,  lateral IGBT,  substrate bias,  blocking capability,  switching characteristics,  

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Summary: 
The static and dynamic characteristics of the lateral IGBT on the SOI film when the collector voltage of the IGBT is applied to the substrate are invesigated for its application to the high side switch. The measurements on the blocking capability and the switching characteristics under an inductive load are carried out with varying the thickness of the SOI film. The 260 V IGBT can be fabricated on the 5 µm thick SOI film without the special device structure. It is confirmed that the switching speed depends strongly on the SOI film thickness, not on the substrate bias. The dynamic latch-up current during the turn-off transient increases with the decrease in the SOI film thickness. This is caused by the large transient substrate current. This paper exhibits that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on the thin SOI film.