For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
Takashi SUEMASU Yoshifumi KOHNO Nobuhiro SUZUKI Masahiro WATANABE Masahiro ASADA
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
resonant tunneling transistor, metal-insulator heterostructure, CaF2, CoSi2, transfer efficiency,
Full Text: PDF(554.8KB)>>
The transistor action with negative differential resistance (NDR) of a nanometer-thick metal (CoSi2)/insulator (CaF2) resonant tunneling transistor is discussed for two transistor structures. These transistors are composed of metal-insulator (M-I) heterostructures with two metallic (CoSi2) quantum wells and three insulator (CaF2) barriers grown on an n-Si (lll) substrate. One of the two structures has the base terminal connected to one of the quantum wells next to the collector, and the other, to one next to the emitter. Although base resistance is high maybe due to the damage caused during the fabrication process, the two transistors show different characteristics, as expected theoretically. Transfer efficiency α (= IC/IE) close to unity was obtained at 77 K for electrons through the resonant levels in M-I heterostructures.