High-Speed Circuit Techniques for Battery-Operated 16 Mbit CMOS DRAM

Toshikazu SUZUKI  Toru IWATA  Hironori AKAMATSU  Akihiro SAWADA  Toshiaki TSUJI  Hiroyuki YAMAUCHI  Takashi TANIGUCHI  Tsutomu FUJITA  

IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.8   pp.1334-1342
Publication Date: 1994/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: DRAM
DRAM,  cycle time,  battery operating,  high speed,  

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Circuit techniques for realizing fast cycle time of DRAM are described. 1) A high-speed and high-efficiency word-line level Vpp supply can be obtained by a unique static CMOS double-boosted level generator (SCDB) which controls the Vpp charge supply gate. 2) A new write-control scheme eliminates the timing overhead of a read access time after write cycle in a fast page mode operation. 3) A floor plan that minimizes the load of signal paths by employing the lead-on-chip (LOC) assembly technique. These techniques are implemented in an address-multiplexed 16 Mbit CMOS DRAM using a 0.5-µm CMOS technology. A 31-ns RAS cycle time and a 19-ns fast page mode cycle time at Vcc3.3 V, and also even at Vcc1.8 V, a 53-ns RAS cycle time and a 32-ns fast page mode cycle time were achieved. This DRAM is applicable to battery-operated computing tools.