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A 180 MHz Multiple-Registered 16 Mbit SDRAM with Flexible Timing Scheme
Hisashi IWAMOTO Naoya WATANABE Akira YAMAZAKI Seiji SAWADA Yasumitsu MURAI Yasuhiro KONISHI Hiroshi ITOH Masaki KUMANOYA
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
synchronous DRAM, SDRAM, high speed DRAM, multiple-register,
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A multiple-registered architecture is described for 180 MHz 16 Mbit synchronous DRAM. The proposed architecture realizes a flexible control of critical timings such as I/O line busy time and achieves an operation at 180 MHz clock rate with area penalty of only 5.4% over the conventional DRAM.