Fabrication of All-Epitaxial High-Tc SIS Tunnel Structures

Yasuo TAZOH  Junya KOBAYASHI  Masashi MUKAIDA  Shintaro MIYAZAWA  

IEICE TRANSACTIONS on Electronics   Vol.E77-C    No.8    pp.1199-1203
Publication Date: 1994/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Superconducting Devices)
Category: HTS
Josephson tunnel junction,  growth mode,  atomically flat surface,  insulating barrier,  wetability,  

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Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.