For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Fabrication of All-Epitaxial High-Tc SIS Tunnel Structures
Yasuo TAZOH Junya KOBAYASHI Masashi MUKAIDA Shintaro MIYAZAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Superconducting Devices)
Josephson tunnel junction, growth mode, atomically flat surface, insulating barrier, wetability,
Full Text: PDF(611.4KB)>>
Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.