C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO2

Takashi OHZONE
Takashi HORI

IEICE TRANSACTIONS on Electronics   Vol.E77-C    No.6    pp.952-959
Publication Date: 1994/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
MOSFET,  Si-implantation,  EEPROM,  

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C-V and I-V characteristics of an n-MOSFET with Si-implanted gate-SiO2 of 50 nm are analyzed by using a test device with large equal channel width and length of 100 µm, and discussed for realizing a large hysteresis window of threshold voltage. Interface trap densities change logarithmically from 31010 to 11012cm2eV1 as the Si-dose at 25 keV increases from zero to 31016cm2. Threshold-voltage changes caused by 25 keV implantaions are as high as 0.2 V. Effective mobilities (subthreshold swings) change from 600 (0.10) to 100 cm2/V・s (0.26 V/decade) as the Si-dose increases from 0 to 31016 cm2 at 25 keV, and both parameters are related with the change of interface trap densities. There is a close relationship between the hysteresis windows of gate current and threshold voltage, and the largest threshold voltage window in a low gate voltage region is obtained for the MOSFET with Si-implantation at 25 keV/31016 cm2.