CR delay caused in the ladder resistors. Circuit techniques for high-accuracy conversion with single 5-V power supply, such as compensation technique for VBE modulation in emitter degeneration amplifier, are also described. A 10-b A/D converter is fabricated in a 0.8-µm BiCMOS process with fT of 9 GHz. It successfully operates at 50 MS/s with 500-mW power consumption and with 5-V single supply." />


A 10-b 50 MS/s 500-mW A/D Converter Using a Differential-Voltage Subconverter

Takahiro MIKI  Hiroyuki KOUNO  Toshio KUMAMOTO  Yasushi KINOSHITA  Takayuki IGARASHI  Keisuke OKADA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.5   pp.846-852
Publication Date: 1994/05/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
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Summary: 
A BiCMOS A/D converter using a "differential voltage subconverter," which directly converts a voltage difference of complementary analog inputs to a digital code, is described. Fully differential architecture has advantages in immunity of common-mode error and in reduction of supply voltage. This differential-voltage subconverter realizes the fully differential A/D conversion without using interpolation technique. This subconverter is free from CR delay caused in the ladder resistors. Circuit techniques for high-accuracy conversion with single 5-V power supply, such as compensation technique for VBE modulation in emitter degeneration amplifier, are also described. A 10-b A/D converter is fabricated in a 0.8-µm BiCMOS process with fT of 9 GHz. It successfully operates at 50 MS/s with 500-mW power consumption and with 5-V single supply.