ESR Study of MOSFET Characteristics Degradation Mechanism by Water in Intermetal Oxide

Kazunari HARADA  Naoki HOSHINO  Mariko Takayanagi TAKAGI  Ichiro YOSHII  

IEICE TRANSACTIONS on Electronics   Vol.E77-C    No.4    pp.595-600
Publication Date: 1994/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on LSI Failure Analysis)
water,  ESR,  hot carrier,  intermetal oxide,  silicon dangling bond,  

Full Text: PDF(493KB)>>
Buy this Article

When intermetal oxide film which contains much water deposited on MOSFET, degradation of hot carrier characteristics is enhanced. This mechanism is considered to be as follows. During the annealing process water is desorbed from the intermetal oxide. The desorbed water reaches the MOSFET and eventually hydrogens terminate silicon dangling bonds in the gate oxide. This paper describes a new approach which uses ESR to analyze this mechanism. The ESR measurement of number of the silicon dangling bonds in undoped polysilicon lying under the intermetal oxide shows that water diffuses from intermetal oxide to MOSFET during the annealing process. The water diffusion is blocked by introduction between the polysilicon and the intermetal oxides of P-SiN layer or CVD SiO2 damaged by implantation.