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Defect Detection of Passivation Layer by a Bias-Free Cu Decoration Method
Tetsuaki WADA Shinji NAKANO
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on LSI Failure Analysis)
semiconductor, passivation, defect, reliability, humidity test,
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New detection method of passivation defect was studied. The method was the Cu decoration method without bias (bias-free Cu decoration). As the result of comparison with conventional method, it was found that a bias-free Cu decoration method was effective, sensitive and simple. In this method, the difference of humidity resistance induced by poor passivation coverage could be evaluated.