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Temperature Adaptive Voltage Reference Network for Realizing a Transconductance with Low Temperature Sensitivity
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Integrated Electronics
transconductance, MOS and BJT transconductances, technique for low temperature sensitivity, temperature adaptive voltage reference network,
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A technique to realize a transconductance which is relatively insensitive over temperature variations is reported. Simulation results with MOS and bipolar transistors indicate substantial improvement in temperature insensitivity over a range exceeding 100 degrees Celsius. It should find useful applications in analog LSI/VLSI systems operating over a wide range of temperature.