Temperature Adaptive Voltage Reference Network for Realizing a Transconductance with Low Temperature Sensitivity

Rabin RAUT  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.3   pp.515-518
Publication Date: 1994/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Integrated Electronics
Keyword: 
transconductance,  MOS and BJT transconductances,  technique for low temperature sensitivity,  temperature adaptive voltage reference network,  

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Summary: 
A technique to realize a transconductance which is relatively insensitive over temperature variations is reported. Simulation results with MOS and bipolar transistors indicate substantial improvement in temperature insensitivity over a range exceeding 100 degrees Celsius. It should find useful applications in analog LSI/VLSI systems operating over a wide range of temperature.