Evaluation of Plasma Damage to Gate Oxide

Yukiharu URAOKA  Koji ERIGUCHI  Tokuhiko TAMAKI  Kazuhiko TSUJI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.3   pp.453-458
Publication Date: 1994/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
QBD,  gate oxide,  plasma,  reliability,  damage,  photon emission,  LOCOS,  thinning,  

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Summary: 
Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.