New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns

Masaru SASAGO  Takahiro MATSUO  Kazuhiro YAMASHITA  Masayuki ENDO  Kouji MATSUOKA  Taichi KOIZUMI  Akiko KATSUYAMA  Noboru NOMURA  

IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.3   pp.416-424
Publication Date: 1994/03/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
lithography,  resist,  excimer laser,  off-axis illumination,  curing,  

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New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.